IndiumV3, Main, Repository, bibRecord, 000076

Molecular beam epitaxy of InN nanorods on Si- and C-faces of SiC substrates

Identifieur interne : 000076 ( Main/Repository ); précédent : 000075; suivant : 000077

Molecular beam epitaxy of InN nanorods on Si- and C-faces of SiC substrates

Auteurs : RBID : Pascal:14-0018956

Descripteurs français

Pascal (Inist)
- Epitaxie jet moléculaire, Composé III-V, Nanobâtonnet, Nanomatériau, Traitement par plasma, Condition opératoire, Indium, Mécanisme croissance, Coalescence, Synthèse nanomatériau, Polarité, Nitrure, Semiconducteur III-V, Substrat silicium, Substrat SiC, 8115H, 8107V, 8107, 8110A.

English descriptors

KwdEn :
- Coalescence, Growth mechanism, III-V compound, III-V semiconductors, Indium, Molecular beam epitaxy, Nanomaterial synthesis, Nanorod, Nanostructured materials, Nitrides, Operating conditions, Plasma assisted processing, Polarity.

Abstract

The Plasma-Assisted Molecular Beam Epitaxy (PA-MBE) of InN nanorods on Si- and C-faces of 6H-SiC substrates has been demonstrated. The optimum PA-MBE growth conditions for InN nanorods were with an indium beam equivalent pressure of ∼2.0 × 10^-7Torr and a growth temperature ∼400 °C. The coalescence of InN nanorods to form a continuous InN layer has been achieved. The InN layers grown by MBE on Si-face 6H-SiC have In-polarity.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 000319

Links to Exploration step

Pascal:14-0018956

Le document en format XML

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<author><name sortKey="Goff, L E" uniqKey="Goff L">L. E. Goff</name>
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<term>Traitement par plasma</term>
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<front><div type="abstract" xml:lang="en">The Plasma-Assisted Molecular Beam Epitaxy (PA-MBE) of InN nanorods on Si- and C-faces of 6H-SiC substrates has been demonstrated. The optimum PA-MBE growth conditions for InN nanorods were with an indium beam equivalent pressure of ∼2.0 × 10<sup>-7 </sup>
Torr and a growth temperature ∼400 °C. The coalescence of InN nanorods to form a continuous InN layer has been achieved. The InN layers grown by MBE on Si-face 6H-SiC have In-polarity.</div>
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Molecular beam epitaxy of InN nanorods on Si- and C-faces of SiC substrates

Molecular beam epitaxy of InN nanorods on Si- and C-faces of SiC substrates

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri